Electrogrip Advanced Electrostatic Gripping Solutions - Electrostatic Chucks, Electrostatic Chuck Power Supplies, High Voltage Power Supplies, Control Sytems, Vacuum Systems

High Rate, Low Pressure, High Density Plasma Etch / Deposition System

Obtain Selective Etching with Angle Control ...

Oxide on Silicon Angled Etch

or Gap-Filling Deposition of Silicon or Silicon Dioxide ...

Gap Fill over Al Lines on Si

In a Self-Cleaning and Compact Hollow Cathode Single-Wafer Chamber...

Processing for 76mm - 200mm wafer diameters in a compact system

with electrostatic chucking and easy chamber maintenance ...

System Features;

ECR (Electron Cyclotron Resonance) SYSTEMS:

ECR chamber

In the ECR chamber's diffuse glow regions, again process residues accumulate on chamber walls and fixturing since they are not etched in cleaning plasmas, requiring manual cleaning and replacement of parts.


ICP (Inductively Coupled Plasma) High Density Systems for

Reactive Ion Etch / Plasma Enhanced Chemical Vapor Deposition (RIE/PECVD)

ICP Reactor

In ICP reactors, process deposit flakes are not cleaned during plasma cleaning runs in the diffuse glow regions. Even in the intense glow region of an ICP upper source there are often alternating areas of intense and weak glow regions which permit deposits to accumulate and fall onto substrate wafers.


TRIODE REACTOR ... for RIE and PECVD processes ...

Triode Reactor

There are many areas of standard Triode Reactors where deposits form. Most are inefficiently cleaned in etch plasmas. Chamber sidewalls, perforated metal plates intersposed between targets, and 'focus rings' around the substrate wafer all experience lower glow discharge intensities than at target surfaces.


HOLLOW CATHODE Reactor from Electrogrip, for Self-Cleaning and Low Particle Counts in

Low Pressure, High Rate, High Density PECVD / HDP / High Density RIE Processes...

Hollow Cathode Chamber

Cleaning in the Hollow Cathode Reactor is accomplished by running an etch plasma after process wafers. All residual films opposing or near wafers are removed in a high-intensity plasma discharge. Preventive maintenance schedules are greatly extended compared to other reactor types.

Outer regions of the Hollow Cathode Reactor chamber can still accumulate deposits, which eventually require manual cleaning.

The Electrogrip Hollow Cathode Reactor is provided with a load lock and automated transfer arm, and the model pictured above processes 76mm, 100mm, 150mm, and 200mm wafer diameters in a compact and accessible system. Please contact Electrogrip for more details and publications.